Recent Advances in SILAR-deposited Metal Sulfide Films
DOI:
https://doi.org/10.56532/mjsat.v5i4.586Keywords:
Thin films, Metal chalcogenide , Band gap, Solar cell applicationsAbstract
Many researchers have reported physical, and chemical deposited thin films. Nevertheless, the deposition methods had a strong effect on the properties of the produced films. SILAR method has been used to produce different thin films for various studies over the years. Alternative deposition methods have attracted extensive attention while this approach has several advantages. Seemingly, high area deposition could succeed at low temperatures, with standard inexpensive equipment, without the requirement of a vacuum chamber and some unique films properties could be controlled. The SILAR process usually includes four stages; adsorption, a wash, reaction and second wash were performed to rinse off unreacted species. SILAR method was used to deposit a thin film of metal sulfides on substrates in this study. The primary outcomes are the characterization of the films and their application after finishing. It was observed that the number of deposition cycles, rinsing time, immersion duration and precursor concentration affected the crystallinity, grain size, film thicknesses and surface morphologies of the deposited films. Furthermore, the results confirmed these films for solar cells, sensors and supercapacitors applications. The power conversion efficiency also improved of Cu2SnS3 about 0.11% and copper zinc tin sulfide were found to be 0.396%, respectively.
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